2SK1299L

Manufacturer Part Number2SK1299L
DescriptionSilicon N-Channel MOS FET
ManufacturerHitachi Semiconductor
2SK1299L datasheet
 


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Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current I
Gate to source cutoff voltage
Static Drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note:
1. Pulse test
Symbol Min
Typ
Max
V
100
(BR)DSS
V
20
(BR)GSS
I
10
GSS
100
DSS
V
1.0
2.0
GS(off)
R
0.25
0.35
DS(on)
0.30
0.45
|yfs|
2.4
4.0
Ciss
400
Coss
165
Crss
45
t
5
d(on)
t
35
r
t
160
d(off)
t
60
f
V
1.0
DF
t
135
rr
2SK1299(L), 2SK1299(S)
Unit
Test conditions
V
I
= 10 mA, V
= 0
D
GS
V
I
= 100 A, V
= 0
G
DS
A
V
= 16 V, V
= 0
GS
DS
A
V
= 80 V, V
= 0
DS
GS
V
I
= 1 mA, V
= 10 V
D
DS
1
I
= 2 A, V
= 10 V *
D
GS
1
I
= 2 A, V
= 4 V
*
D
GS
1
S
I
= 2 A, V
= 10 V *
D
DS
pF
V
= 10 V, V
= 0,
DS
GS
pF
f = 1 MHz
pF
ns
I
= 2 A, V
= 10 V,
D
GS
ns
R
= 15
L
ns
ns
V
I
= 3 A, V
= 0
F
GS
ns
I
= 3 A, V
= 0,
F
GS
di
/dt = 50 A/ s
F
3