2SK1299L Hitachi Semiconductor, 2SK1299L Datasheet - Page 3

• Manufacturer Part Number: 2SK1299L
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current I
Gate to source cutoff voltage
Static Drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note:
1. Pulse test
Symbol Min
V
V
I
V
R
|yfs|
Ciss
Coss
Crss
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
100
—
—
1.0
—
—
—
—
—
—
—
—
2.4
—
—
—
20
Typ
—
—
—
—
—
0.25
0.30
4.0
400
165
45
5
35
160
60
1.0
135
Max
—
—
100
2.0
0.35
0.45
—
—
—
—
—
—
—
—
—
—
10
Unit
V
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
2SK1299(L), 2SK1299(S)
A
A
Test conditions
I
I
V
V
I
I
I
I
V
f = 1 MHz
I
R
I
I
di
D
G
D
D
D
D
D
F
F
GS
DS
DS
L
F
= 3 A, V
= 3 A, V
= 10 mA, V
= 100 A, V
= 1 mA, V
= 2 A, V
= 2 A, V
= 2 A, V
= 2 A, V
/dt = 50 A/ s
= 15
= 80 V, V
= 10 V, V
= 16 V, V
GS
GS
GS
GS
DS
GS
DS
= 0
= 0,
= 10 V *
= 10 V *
= 4 V
= 10 V,
GS
GS
GS
DS
= 10 V
DS
= 0
= 0,
= 0
= 0
= 0
1
*
1
1
3