2SK1299L

Manufacturer Part Number2SK1299L
DescriptionSilicon N-Channel MOS FET
ManufacturerHitachi Semiconductor
2SK1299L datasheet
 


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2SK1299(L), 2SK1299(S)
Power vs. Temperature Derating
30
20
10
0
50
Case Temperature T
Typical Output Characteristics
10
10 V
4.5 V
5 V
8
6
4
2
0
2
4
Drain to Source Voltage V
4
50
20
10
0.5
0.2
0.1
0.05
100
150
(°C)
C
4 V
3.5 V
3 V
V
= 2.5 V
GS
Pulse Test
6
8
10
(V)
DS
Maximum Safe Operation Area
Operation in this area
is limited by R
DS (on)
5
2
1
Ta = 25°C
1
2
5
10
20
50
100
200
Drain to Source Voltage V
DS
Typical Transfer Characteristics
5
V
= 10 V
DS
Pulse Test
4
3
2
1
T
= –25°C
C
25°C
75°C
0
0
1
2
3
4
Gate to Source Voltage V
GS
500
1000
(V)
5
(V)