2SK1299L Hitachi Semiconductor, 2SK1299L Datasheet - Page 5

• Manufacturer Part Number: 2SK1299L
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

0.4
2.0
1.6
1.2
0.8
0.5
0.4
0.3
0.2
0.1
0
0
–40
0
Drain to Source Saturation Voltage
Gate to Source Voltage V
Static Drain to Source on State
V
vs. Gate to Source Voltage
2
Resistance vs. Temperature
GS
Case Temperature T
0
= 4 V
10 V
4
40
6
Pulse Test
80
Pulse Test
C
1 A
GS
2 A
1 A
I
D
8
(°C)
120
= 5 A
(V)
I
2 A
D
2 A
1 A
5 A
= 5 A
10
160
0.5
0.2
0.1
0.05
10
0.05
0.5
0.2
0.1
2
1
5
0.2
5
2
1
V
Pulse Test
Pulse Test
DS
1.0
Forward Transfer Admittance
2SK1299(L), 2SK1299(S)
= 10 V
Static Drain to Source on State
Resistance vs. Drain Current
0.5
Drain Current I
0.2
Drain Current I
vs. Drain Current
V
1
GS
0.5
= 4 V
2
T
75°C
C
D
1
= –25°C
D
(A)
5
(A)
25°C
2
10 V
10
5
20
5