FQD45N03L Fairchild Semiconductor, FQD45N03L Datasheet - Page 3

• Manufacturer Part Number: FQD45N03L
• Description: N-Channel Logic Level PWM Optimized Power MOSFET
• Manufacturer: Fairchild Semiconductor

©2004 Fairchild Semiconductor Corporation
Typical Characteristic
Figure 1. Normalized Power Dissipation vs
1.2
1.0
0.8
0.6
0.4
0.2
500
100
0
10
0.01
0.1
0
2
1
10
10
-5
-5
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
V
GS
V
GS
25
= 10V
Ambient Temperature
= 5V
T
A
, AMBIENT TEMPERATURE (
50
Figure 3. Normalized Maximum Transient Thermal Impedance
10
10
-4
-4
75
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
SINGLE PULSE
T
C
100
= 25°C unless otherwise noted
Figure 4. Peak Current Capability
o
C)
10
10
-3
-3
125
t, RECTANGULAR PULSE DURATION (s)
150
t, PULSE WIDTH (s)
Figure 2. Maximum Continuous Drain Current vs
10
10
-2
-2
25
20
15
10
5
0
25
50
10
Case Temperature
10
-1
-1
T
C
NOTES:
DUTY FACTOR: D = t
PEAK T
, CASE TEMPERATURE (
V
GS
75
= 10V
J
= P
V
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
T
GS
DM
C
I = I
= 5V
= 25
x Z
25
100
o
10
10
P
JC
C
DM
1
0
0
o
/t
x R
C DERATE PEAK
2
150 - T
o
C)
JC
125
t
1
+ T
125
t
2
C
C
FQD45N03L Rev. B1
10
10
150
1
1