FQD45N03L Fairchild Semiconductor, FQD45N03L Datasheet - Page 4

• Manufacturer Part Number: FQD45N03L
• Description: N-Channel Logic Level PWM Optimized Power MOSFET
• Manufacturer: Fairchild Semiconductor

©2004 Fairchild Semiconductor Corporation
Typical Characteristic
Figure 7. Drain To Source On Resistance vs Gate
Figure 9. Normalized Gate Threshold Voltage vs
50
40
30
20
10
0
40
30
20
10
1.2
1.0
0.8
0.6
0.4
1
Figure 5. Transfer Characteristics
-80
2
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
DD
I
= 15V
D
Voltage And Drain Current
= 10A
T
J
Junction Temperature
-40
= 25
V
V
GS
GS
T
2
o
J
, GATE TO SOURCE VOLTAGE (V)
4
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
C
I
D
= 20A
0
T
J
= 150
3
40
6
o
C
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
(Continued) T
T
J
V
= -55
GS
80
= V
o
C
DS
4
8
o
, I
C)
D
120
= 250 A
C
= 25°C unless otherwise noted
160
10
5
Breakdown Voltage vs Junction Temperature
50
40
30
20
10
Figure 8. Normalized Drain To Source On
0
Figure 10. Normalized Drain To Source
2.0
1.5
1.0
0.5
1.2
1.1
1.0
0.9
0
Resistance vs Junction Temperatrue
Figure 6. Saturation Characteristics
-80
-80
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
I
D
= 250 A
V
-40
-40
V
GS
DS
0.5
T
T
= 10V
, DRAIN TO SOURCE VOLTAGE (V)
J
J
, JUNCTION TEMPERATURE (
, JUNCTION TEMPERATURE (
0
0
T
C
= 25
1.0
o
40
40
C
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
80
80
V
V
GS
GS
1.5
= 10V, I
o
o
= 5V
C)
C)
V
V
120
120
GS
FQD45N03L Rev. B1
GS
D
= 3V
= 4V
=20A
160
160
2.0