DCR806SG Dynex Semiconductor, DCR806SG Datasheet
DCR806SG
Related parts for DCR806SG
DCR806SG Summary of contents
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... Lower voltage grades available. ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR806SG26 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. www.dynexsemi.com ...
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... DCR806SG CURRENT RATINGS T = 60˚C unless stated otherwise case Symbol Parameter Double Side Cooled I Mean on-state current T(AV) RMS value I T(RMS) I Continuous (direct) on-state current T Single Side Cooled (Anode side) I Mean on-state current T(AV) I RMS value T(RMS) Continuous (direct) on-state current I T CURRENT RATINGS T = 80˚ ...
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... T = 125 C case Conditions dc Double side cooled Anode dc Single side cooled Cathode dc Double side Clamping force 12.5kN with mounting compound Single side On-state (conducting) Reverse (blocking) DCR806SG Max. Units 9 405 11. 633 Min. Max. ...
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... DCR806SG DYNAMIC CHARACTERISTICS Symbol Parameter I /I Peak reverse and off-state current RRM DRM dV/dt Maximum linear rate of rise of off-state voltage dI/dt Rate of rise of on-state current V Threshold voltage T(TO) r On-state slope resistance T t Delay time gd t Turn-off time q I Latching current L I Holding current H GATE TRIGGER CHARACTERISTICS AND RATINGS ...
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... T = 125˚C for I j www.dynexsemi.com 3000 125˚C Min 125˚C Max j 2500 1 2 2000 1500 1000 500 0 0 2.0 2.5 - (V) T 500A to 2500A T DCR806SG D.C. Half wave 3 Phase 6 Phase 500 1000 1500 Mean current (A) T(AV) Fig.3 Dissipation curves 2000 5/8 ...
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... DCR806SG 10000 dI/ 1000 Conditions total integral stored charge 125˚C j 100 0.1 1.0 Rate of decay of on-state current dI/dt - (A/µs) Fig.4 Stored charge 0.1 0.01 Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ 0.001 0.001 0.01 0.1 Time - (s) Fig.6 Maximum (limit) transient thermal impedance - junction to case ...
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... For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole Ø3.6x2.0 deep (in both electrodes) Cathode tab Ø1.5 Gate www.dynexsemi.com Cathode Ø58.5 max Ø34 nom Ø34 nom Nominal weight: 250g Clamping force: 12.5kN ±10% Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: G DCR806SG Anode 7/8 ...
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... DCR806SG POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. ...