DCR806SG Dynex Semiconductor, DCR806SG Datasheet - Page 4

• Manufacturer Part Number: DCR806SG
• Description: Phase Control Thyristor
• Manufacturer: Dynex Semiconductor

DCR806SG
DYNAMIC CHARACTERISTICS
GATE TRIGGER CHARACTERISTICS AND RATINGS
4/8
Symbol
Symbol
I
RRM
dV/dt
V
P
dI/dt
V
V
V
I
P
V
V
I
FGM
T(TO)
t
G(AV)
RGM
r
t
I
I
FGM
GT
FGN
gd
/I
GM
T
q
L
H
GT
GD
DRM
Peak reverse and off-state current
Maximum linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
Delay time
Turn-off time
Latching current
Holding current
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Parameter
Parameter
At V
To 67% V
From 67% V
Gate source 1.5A
t
At T
At T
V
t
I
V
V
T
T
V
V
At V
Anode positive with respect to cathode
Anode negative with respect to cathode
Anode positive with respect to cathode
See table, gate characteristics curve
r
r
T
= 0.5 s, T
D
R
DR
j
j
DRM
DRM
= 0.5 s, T
= 500A, t
= 25
= 25
= 67% V
= 50V, dI
vj
vj
= 67% V
RRM
DRM
= 5V, T
= 5V, T
= 125
= 125
o
o
/V
C, V
C, V
T
DRM
case
DRM
j
p
o
o
= 125
DRM
j
D
D
C
C
, T
RR
DRM
case
= 125
T
= 1ms, T
DRM
= 25
case
= 5V
= 5V
j
/dt = 20A/ s,
= 125
, Gate source 30V, 15
case
, dV
= 25
= 25
Conditions
to 1500A
o
o
C
C
o
= 125
C
o
DR
o
C. Gate open circuit.
o
Conditions
C
j
C
/dt = 20V/ s linear
= 125˚C,
o
C
Repetitive 50Hz
Non-repetitive
www.dynexsemi.com
Typ.
300
550
60
-
-
-
-
-
-
-
1000
Max.
1000
Max.
0.65
0.91
0.25
0.25
300
500
100
500
200
150
1.5
3.5
50
30
10
10
5
Units
Units
V/ s
A/ s
A/ s
mA
m
mA
mA
mA
W
W
V
V
V
V
A
V
V
s
s