fqt2p25 Fairchild Semiconductor, fqt2p25 Datasheet

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fqt2p25

Manufacturer Part Number
fqt2p25
Description
Fqt2p25 250v P-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
©2001 Fairchild Semiconductor Corporation
FQT2P25
250V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Ambient *
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
G
T
SOT-223
FQT Series
C
C
C
= 25°C unless otherwise noted
S
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• -0.55A, -250V, R
• Low gate charge ( typical 6.5 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• Improved dv/dt capability
Typ
--
G
DS(on)
! ! ! !
! ! ! !
-55 to +150
FQT2P25
-0.55
-0.35
-0.55
-250
0.25
0.02
-2.2
120
-5.5
300
2.5
= 4.0
30
▶ ▶ ▶ ▶
▶ ▶ ▶ ▶
S
! ! ! !
! ! ! !
! ! ! !
! ! ! !
D
● ●
● ●
● ●
● ●
● ●
● ●
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
@V
Max
50
QFET
GS
= 10 V
May 2001
Units
W/°C
Units
°C/W
V/ns
mJ
mJ
Rev. A, May 2001
°C
°C
W
V
A
A
A
V
A
TM

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fqt2p25 Summary of contents

Page 1

... D FQT2P25 Units -250 V -0.55 A -0. 120 mJ -0.55 A 0.25 mJ -5.5 V/ns 2 ...

Page 2

... ≤ -2.3A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions -250 -250 A, Referenced to 25°C ...

Page 3

... Drain Current and Gate Voltage 400 300 C iss C oss 200 C rss 100 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation 0 10 ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics 10V GS ※ Note : T = 25℃ ...

Page 4

... Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 2.5 2.0 1.5 1.0 ※ Notes : 0 -250 μ 0.0 -100 100 150 200 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms -10V -10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT -10V -10V DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation DUT DUT + + Driver Driver G G Compliment of DUT Compliment of DUT ...

Page 7

... Package Dimensions 3.00 2.30 TYP (0.95) 4.60 6.50 ©2001 Fairchild Semiconductor Corporation SOT-223 0.10 MAX1.80 0.70 0.10 (0.95) 0.25 0.25 0.20 +0.04 0.06 –0.02 +0.10 –0.05 Rev. A, May 2001 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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