fqt2p25 Fairchild Semiconductor, fqt2p25 Datasheet - Page 3

• Manufacturer Part Number: fqt2p25
• Description: Fqt2p25 250v P-channel Mosfet
• Manufacturer: Fairchild Semiconductor

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
400
300
200
100
10
10
15
12
-1
9
6
3
0
0
0
10
10
0.0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom : -5.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
V
GS
1.5
-V
-V
DS
DS
-I
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
D
10
, Drain Current [A]
0
0
V
C
C
C
GS
oss
rss
iss
= - 20V
3.0
V
GS
= - 10V
C
C
C
※ Notes :
iss
oss
rss
1. 250μ s Pulse Test
2. T
10
10
※ Note : T
= C
4.5
= C
= C
1
1
C
gs
gd
ds
= 25℃
+ C
+ C
gd
gd
※ Notes :
(C
J
1. V
2. f = 1 MHz
= 25℃
ds
= shorted)
GS
= 0 V
6.0
10
10
10
10
12
10
-1
-1
8
6
4
2
0
0
0
0.2
2
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
0.4
1
Variation vs. Source Current
150℃
0.6
4
-V
-V
2
Q
25℃
and Temperature
150℃
SD
GS
G
0.8
, Total Gate Charge [nC]
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
25℃
V
DS
V
3
1.0
DS
= -200V
V
DS
= -125V
= -50V
6
1.2
4
-55℃
1.4
※ Notes :
※ Notes :
5
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
1.6
= -40V
= 0V
D
6
= -2.3 A
1.8
2.0
Rev. A, May 2001
10
7