lh28f160bg-tl Sharp Microelectronics of the Americas, lh28f160bg-tl Datasheet - Page 16

• Manufacturer Part Number: lh28f160bg-tl
• Description: M-bit Smart Flash Memories
• Manufacturer: Sharp Microelectronics of the Americas

FULL STATUS CHECK PROCEDURE
Read Status Register
Data (See Above)
Check if Desired
Status Register
Block Address
Block Address
Block Erase
Block Erase
Write D0H,
Successful
Write 20H,
Full Status
Complete
SR.4, 5 =
SR.7 =
SR.3 =
SR.1 =
SR.5 =
Read
Start
0
0
0
0
1
0
1
1
1
1
Block Erase
Command Sequence
No
Device Protect Error
Suspend
V
PP
Fig. 3 Automated Block Erase Flowchart
Block Erase
Range Error
Error
Error
Suspend Block
Erase Loop
Yes
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OPERATION
OPERATION COMMAND
Write
Write
Read
Standby
Standby
Standby
Standby
Standby
Repeat for subsequent block erasures.
Full status check can be done after each block erase or after
a sequence of block erasures.
Write FFH after the last block erase operation to place device
in read array mode.
SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear
Status Register command in cases where multiple blocks
are erased before full status is checked.
If error is detected, clear the status register before attempting
retry or other error recovery.
BUS
BUS
Erase Setup
COMMAND
Confirm
Erase
Data = 20H
Addr = Within Block to be Erased
Data = D0H
Addr = Within Block to be Erased
Check SR.3
1 = V
Check SR.1
1 = Device Protect Detect
Check SR.4, 5
Both 1 = Command Sequence Error
Check SR.5
1 = Block Erase Error
Status Register Data
Check SR.7
1 = WSM Ready
0 = WSM Busy
PP
Error Detect
LH28F160BG-TL/BGH-TL
COMMENTS
COMMENTS