lh28f160bg-tl Sharp Microelectronics of the Americas, lh28f160bg-tl Datasheet - Page 32

• Manufacturer Part Number: lh28f160bg-tl
• Description: M-bit Smart Flash Memories
• Manufacturer: Sharp Microelectronics of the Americas

6.2.7 RESET OPERATIONS
NOTES :
1. These specifications are valid for all product versions
2. If RP# is asserted while a block erase or word write
SYMBOL
t
t
t
PLPH
PLRH
VPH
(packages and speeds).
operation is not executing, the reset will complete within
100 ns.
RY/BY# (R)
RY/BY# (R)
RP# Pulse Low Time
(If RP# is tied to V
RP# Low to Reset during Block Erase or Word Write
V
RP# (P)
RP# (P)
RP# (P)
CC
V
2.7 V to RP# High
CC
High Z
V
V
V
High Z
V
V
V
2.7 V
V
V
V
OL
IH
IL
OL
IH
IL
IL
IH
IL
CC
PARAMETER
, this specification is not applicable)
Fig. 12 AC Waveform for Reset Operation
t
t
PLPH
PLPH
(A) Reset During Read Array Mode
(B) Reset During Block Erase or Word Write
(C) RP# Rising Timing
Reset AC Specifications
t
VPH
t
PLRH
- 32 -
3. A reset time, t
4. When the device power-up, holding RP#-low minimum
NOTE
or RP# going high until outputs are valid.
100 ns is required after V
range and also has been in stable there.
2, 3
4
(NOTE 1)
PHQV
MIN.
100
100
V
, is required from the latter of RY/BY#
CC
LH28F160BG-TL/BGH-TL
= 2.7 to 3.6 V
CC
has been in predefined
MAX.
22
UNIT
ns
µs
ns