lh28f160bg-tl Sharp Microelectronics of the Americas, lh28f160bg-tl Datasheet

lh28f160bg-tl

Manufacturer Part Number

lh28f160bg-tl

Description

M-bit Smart Flash Memories

Manufacturer

Sharp Microelectronics of the Americas

Datasheet

1.LH28F160BG-TL.pdf (36 pages)

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DESCRIPTION

The LH28F160BG-TL/BGH-TL flash memories with

Smart 3 technology are high-density, low-cost,

nonvolatile, read/write storage solution for a wide

range of applications. The LH28F160BG-TL/

BGH-TL can operate at V

Their low voltage operation capability realizes

longer battery life and suits for cellular phone

application. Their boot, parameter and main-blocked

architecture, flexible voltage and enhanced cycling

capability provide for highly flexible component

suitable for portable terminals and personal

computers. Their enhanced suspend capabilities

provide for an ideal solution for code + data storage

applications. For secure code storage applications,

such as networking, where code is either directly

executed out of flash or downloaded to DRAM, the

LH28F160BG-TL/BGH-TL offer two levels of

protection : absolute protection with V

selective hardware boot block locking. These

alternatives give designers ultimate control of their

code security needs.

FEATURES

• Smart 3 technology

• High performance read access time

COMPARISON TABLE

LH28F160BG-TL/BGH-TL

In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books,

etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

LH28F160BG-TL

LH28F160BGH-TL

LH28F160BV-TL

LH28F160BVH-TL

Refer to the datasheet of LH28F160BV-TL/BVH-TL.

– 2.7 to 3.6 V V

– 2.7 to 3.6 V or 12 V V

LH28F160BG-TL10/BGH-TL10

– 100 ns (2.7 to 3.6 V)

LH28F160BG-TL12/BGH-TL12

– 120 ns (2.7 to 3.6 V)

VERSIONS

and V

BIT CONFIGURATION

2 MB x 8/1 MB x 16

1 MB x 16

= 2.7 V.

at GND,

- 1 -

• Enhanced automated suspend options

• SRAM-compatible write interface

• Optimized array blocking architecture

• Enhanced cycling capability

• Low power management

• Automated word write and block erase

• ETOX

• Packages

ETOX is a trademark of Intel Corporation.

– Word write suspend to read

– Block erase suspend to word write

– Block erase suspend to read

– Two 4 k-word boot blocks

– Six 4 k-word parameter blocks

– Thirty-one 32 k-word main blocks

– Top or bottom boot location

– 100 000 block erase cycles

– Deep power-down mode

– Automatic power saving mode decreases I

– Command user interface

– Status register

– 48-pin TSOP Type I (TSOP048-P-1220)

– 60-ball CSP (FBGA060/048-P-0811)

in static mode

16 M-bit (1 MB x 16) Smart 3

V nonvolatile flash technology

OPERATING TEMPERATURE

Normal bend/Reverse bend

LH28F160BG-TL/BGH-TL

–25 to +85°C

–40 to +85°C

0 to +70°C

Flash Memories

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