lh28f160bg-tl Sharp Microelectronics of the Americas, lh28f160bg-tl Datasheet - Page 33

• Manufacturer Part Number: lh28f160bg-tl
• Description: M-bit Smart Flash Memories
• Manufacturer: Sharp Microelectronics of the Americas

6.2.8 BLOCK ERASE AND WORD WRITE PERFORMANCE
NOTES :
1. Typical values measured at T
2. Excludes system-level overhead.
SYMBOL
• V
t
t
t
t
t
t
t
t
WHQV1
EHQV1
WHQV2
EHQV2
WHRH1
EHRH1
WHRH2
EHRH2
CC
V
change based on device characterization.
PP
= 2.7 to 3.6 V, T
= 3.0 V/V
Word Write Time
Block Write Time
Block Erase Time
Word Write Suspend Latency Time to Read
Erase Suspend Latency Time to Read
CC
= 3.0 V, V
A
= 0 to +70°C or –25 to +85
PARAMETER
A
= +25˚C and V
PP
32 k-Word Block
4 k-Word Block
32 k-Word Block
4 k-Word Block
32 k-Word Block
4 k-Word Block
= 12.0 V. Subject to
CC
= 3.0 V,
˚
- 33 -
C
NOTE
2
2
2
2
2
2
3. These performance numbers are valid for all speed
4. Sampled, not 100% tested.
versions.
MIN. TYP.
V
PP
= 2.7 to 3.6 V
(NOTE 3, 4)
19.3
1.8
0.3
1.2
0.5
7.5
55
60
(NOTE 1)
MAX.
23.6
8.6
LH28F160BG-TL/BGH-TL
MIN. TYP.
V
PP
= 12.0±0.6 V
11.8
0.6
0.2
0.7
0.5
6.5
15
30
(NOTE 1)
MAX.
7.5
15
UNIT
µs
µs
µs
µs
s
s
s
s