lh28f160bg-tl Sharp Microelectronics of the Americas, lh28f160bg-tl Datasheet - Page 24

• Manufacturer Part Number: lh28f160bg-tl
• Description: M-bit Smart Flash Memories
• Manufacturer: Sharp Microelectronics of the Americas

6.2.3 DC CHARACTERISTICS
SYMBOL
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
LI
LO
CCS
CCD
CCR
CCW
CCE
CCWS
CCES
PPS
PPR
PPD
PPW
PPE
PPWS
PPES
Input Load Current
Output Leakage Current
V
V
V
V
V
V
Suspend Current
V
V
V
V
V
Suspend Current
CC
CC
CC
CC
CC
CC
PP
PP
PP
PP
PP
Standby or Read Current
Deep Power-Down Current
Word Write Current
Block Erase Current
Word Write or Block Erase
Standby Current
Deep Power-Down Current
Read Current
Word Write Current
Block Erase Current
Word Write or Block Erase
PARAMETER
1, 3, 6
1, 5, 6
NOTE
1, 7
1, 7
1, 2
1, 7
1, 7
1
1
1
1
1
1
- 24 -
V
TYP.
CC
0.2
0.1
25
±2
10
14
12
11
10
5
= 2.7 to 3.6 V
MAX.
±10
±15
200
150
200
±1
50
10
25
30
17
12
17
12
40
30
35
20
2
6
5
UNIT
mA V
mA CE# = GND
mA CE# = GND
mA V
mA V
mA V
mA V
mA CE# = V
mA V
mA V
mA V
mA V
µA
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
CMOS Inputs
V
CE# = RP# = V
TTL Inputs
CE# = RP# = V
RP# = GND±0.2 V
I
CMOS Inputs
V
f = 5 MHz
I
TTL Inputs
V
f = 5 MHz
I
V
V
RP# = GND±0.2 V, V
RP# = GND±0.2 V, V
V
OUT
OUT
OUT
LH28F160BG-TL/BGH-TL
CC
IN
CC
OUT
CC
CC
CC
CC
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
= V
= 2.7 to 3.6 V
= 12.0±0.6 V
= 2.7 to 3.6 V
= 12.0±0.6 V
≤ V
> V
= 2.7 to 3.6 V
= 12.0±0.6 V
= 2.7 to 3.6 V
= 12.0±0.6 V
= V
= V
= V
= V
= V
= V
= V
(RY/BY#) = 0 mA
= 0 mA
= 0 mA
= V
CC
CC
CC
PPH1/2
CC
CC
CC
CC
CC
CC
IH
CONDITIONS
CC
or GND
Max.
Max.
Max.
Max.
Max.
Max.
or GND
TEST
CC
IH
±0.2 V
PP
PP
≤ V
> V
CC
CC