s71ws256jc0 Meet Spansion Inc., s71ws256jc0 Datasheet - Page 181

• Manufacturer Part Number: s71ws256jc0
• Description: Stacked Multi-chip Product Mcp 128/64 Megabit 8m/4m X 16-bit Cmos 1.8 Volt-only, Simultaneous Read/write, Burst Mode Flash Memory With Cellularram
• Manufacturer: Meet Spansion Inc.

40 Electrical Characteristics
180
Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only, and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
Note:
-30° C exceeds the CellularRAM Workgroup 1.0 specification of -25° C.
Notes:
1.
2.
3.
4.
5.
6.
Voltage to Any Ball Except V
Voltage on V
Voltage on V
Storage Temperature
Wireless Operating Temperature
Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Operating Current
Asynchronous Random
READ/WRITE
Asynchronous Page
READ
-30° C exceeds the CellularRAM Workgroup 1.0 specification of -25° C.
Input signals may overshoot to V
V
Input signals may undershoot to V
This parameter is specified with the outputs disabled to avoid external loading effects. The user must add the current
required to drive output capacitance expected in the actual system.
I
all inputs must be driven to V
standby mode.
Standby Current
SB
IH
Description
(MAX) values measured with PAR set to FULL ARRAY and TCR set to +85° C. In order to achieve low standby current,
(MIN) value is not aligned with Cellular RAM Workgroup 1.0 specification of V
CC
CCQ
Supply Relative to V
Supply Relative to V
Table 40.2 Electrical Characteristics and Operating Conditions
Parameter
V
CC
IN
OE# = V
Enabled, IOUT = 0
V
, V
V
= V
IN
I
IN
Aysnc/Page CellularRAM Type 2
I
OH
CE# = V
CCQ
Conditions
OL
CCQ
= V
Table 40.1 Absolute Maximum Ratings
Disabled
= 0 to V
A d v a n c e
CCQ
SS
= -0.2mA
= 0.2mA
CCQ
or V
SS
relative to V
CCQ
SS
IH
or 0V Chip
+ 1.0 V for periods less than 2ns during transitions.
- 1.0V for periods less than 2ns during transitions
or Chip
SS
CCQ
or 0V
CCQ
. I
SB
may be slightly higher for up to 500 ms after power-up or when entering
SS
I
V
I
V
CC
V
V
V
V
I
I
I
CC
CCQ
SB
OH
LO
CC
OL
LI
IH
IL
I n f o r m a t i o n
1P
1
Symbol
32Mb
16Mb
-0.50V to (4.0V or V
0.80 V
1.70
1.70
Min
-0.2
1.4
CCQ
-0.20V to 2.45V
-55°C to 150°C
CCQ
-0.20V to 4.0V
-30°C to 85°C
CCQ
Rating
- 0.4 V.
V
0.20 V
CCQ
+ 0.3V, whichever is less)
+0.4
Max
1.95
3.30
110
20
15
80
1
1
+ 0.2
CellRAM_05_A0 August 25, 2005
CCQ
Units
mA
mA
µA
µA
µA
V
V
V
V
V
V
2),(note
(note 4)
(note 5)
(note 5)
(note 6)
Notes
(note
3)