2SK176 HITACHI [Hitachi Semiconductor], 2SK176 Datasheet - Page 3

• Manufacturer Part Number: 2SK176
• Description: Silicon N-Channel MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current I
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note
1. Pulse Test
Symbol
V
V
I
V
R
|y
Ciss
Coss
Crss
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DS(on)
DF
fs
|
Min
250
—
—
2.0
—
5.0
—
—
—
—
—
—
—
—
—
30
Typ
—
—
—
—
—
0.23
8.0
1100
440
68
20
65
100
44
1.0
200
Max
—
—
250
3.0
0.35
—
—
—
—
—
—
—
—
—
—
10
Unit
V
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
A
A
Test Conditions
I
I
V
V
I
I
V
I
V
V
V
f = 1 MHz
I
V
R
I
I
di
D
G
D
D
D
D
F
F
GS
DS
GS
DS
DS
GS
GS
L
F
= 12 A, V
= 12 A, V
= 10 mA, V
= 100 A, V
= 1 mA, V
= 6 A
= 6 A
= 6 A
= 5
/ dt = 100 A / s
= 200 V, V
= 10 V*
= 10 V
= 25 V, V
= 10 V*
= 0
= 10 V
1
1
GS
GS
DS
GS
= 0
= 0,
DS
GS
= 10 V
DS
2SK1761
= 0
= 0
= 0
= 0
3