2SK176 HITACHI [Hitachi Semiconductor], 2SK176 Datasheet - Page 4

• Manufacturer Part Number: 2SK176
• Description: Silicon N-Channel MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

2SK1761
4
160
120
80
40
20
16
12
0
8
4
0
Power vs. Temperature Derating
Typical Output Characteristics
Drain to Source Voltage V
10 V
4
50
Case Temperature
6 V
8
100
V
12
Tc (°C)
GS
4.5 V
= 4 V
DS
5.5 V
150
5 V
(V)
Pulse Test
16
200
20
100
0.3
0.1
30
10
10
3
1
8
6
2
1
4
0
Operation in this area
is limited by R
Maximum Safe Operation Area
Typical Transfer Characteristics
V
Pulse Test
3
DS
Ta = 25°C
Gate to Source Voltage V
Drain to Source Voltage V
= 10 V
2
10
DS
(on)
4
30
6
100
25°C
Tc = 75°C
– 25°C
GS
DS
(V)
(V)
300
8
1000
10