2SK176 HITACHI [Hitachi Semiconductor], 2SK176 Datasheet - Page 6

• Manufacturer Part Number: 2SK176
• Description: Silicon N-Channel MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

2SK1761
6
500
200
100
50
20
10
500
400
300
200
100
0.2
5
0
0
di / dt = 100 A / s
V
V
GS
I = 12 A
Body to Drain Diode Reverse
DS
D
Dynamic Input Characteristics
= 0, Ta = 25°C
0.5
Reverse Drain Current I
8
Recovery Time
V
Gate Charge Qg (nc)
1
DD
100 V
50 V
= 200 V
16
2
24
100 V
DR
50 V
5
(A)
V
DD
32
10
= 200 V
V
GS
20
40
16
12
20
8
0
4
10000
1000
100
200
100
500
10
50
20
10
5
0.1
0
V
PW = 2 s, duty
V
f = 1 MHz
Typical Capacitance vs. Drain
GS
GS
0.2
Drain to Source Voltage V
Switching Characteristics
= 10 V,V
= 0
10
tr
to Source Voltage
Drain Current I (A)
0.5
DD
20
= . .
Coss
Crss
Ciss
1 %
30 V
1
tf
td (off)
td (on)
30
D
2
DS
(V)
40
5
10
50