2SK176 HITACHI [Hitachi Semiconductor], 2SK176 Datasheet - Page 5

• Manufacturer Part Number: 2SK176
• Description: Silicon N-Channel MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

1.0
0.8
0.6
0.4
0.2
5
4
1
– 40
3
2
0
0
Drain to Source Saturation Voltage
Static Drain to Source on State
Pulse Test
V
Gate to Source Voltage V
vs. Gate to Source Voltage
GS
Resistance vs. Temperature
4
= 10 V
0
Case Temperature Tc (°C)
8
40
I = 10 A
12
D
80
Pulse Test
I
GS
D
2 A
= 2 A
(V)
10 A
5 A
16
120
5 A
20
160
0.05
0.5
50
10
0.5
0.2
0.1
20
5
2
1
0.1
1
5
2
0.5
V
Pulse Test
Static Drain to Source on State
Pulse Test
0.2
Forward Transfer Admittance
DS
Resistance vs. Drain Current
1
= 10 V
Drain Current I (A)
vs. Drain Current
2
0.5
Drain Current I (A)
1
5
Tc = –25°C
D
D
V
2
10
GS
25°C
= 10 V
20
2SK1761
15 V
5
75°C
10
50
5