M58LW032C110ZA6 STMICROELECTRONICS [STMicroelectronics], M58LW032C110ZA6 Datasheet - Page 24

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M58LW032C110ZA6

Manufacturer Part Number
M58LW032C110ZA6
Description
32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
M58LW032C
Table 6. Configuration Codes
Note: 1. DQ2-DQ7 are reserved
Table 7. Read Electronic Signature
Note: 1. SBA is the Start Base Address of each block, BCR is Configuration Register data, PRD is Protection Register Data.
Table 8. Read Protection Register
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Manufacturer Code
Device Code
Block Protection Status
Configuration Register
Protection Register
Configuration
Word
Lock
0
1
2
3
4
5
6
7
Code
2. When STS pin is pulsing it remains Low for a typical time of 250ns.
2. Base Address, refer to Figure 8 and Table 8 for more information.
00h
01h
02h
03h
Factory (Unique ID)
Factory (Unique ID)
Factory (Unique ID)
Factory (Unique ID)
Code
Factory, User
DQ1
0
0
1
1
User
User
User
User
Use
DQ2
0
1
0
1
Ready/Busy
Pulse on Erase
complete
Pulse on
Program
complete
Pulse on Erase
or Program
complete
Mode
A8
1
1
1
1
1
1
1
1
1
Address (A21-A1)
A7
V
operations
Hi-Z when the
memory is ready
Pulse Low then
High when
operation
completed
0
0
0
0
0
0
0
0
0
OL
000080h
SBA+02h
000000h
000001h
000005h
during P/E
STS Pin
A6
(2)
0
0
0
0
0
0
0
0
0
(2)
A5
0
0
0
0
0
0
0
0
0
The STS pin is Low during Program and
Erase operations and high impedance when
the memory is ready for any Read, Program
or Erase operation.
Supplies a system interrupt pulse at the end
of a Block Erase operation.
Supplies a system interrupt pulse at the end
of a Program operation.
Supplies a system interrupt pulse at the end
of a Block Erase or Program operation.
A4
0
0
0
0
0
0
0
0
1
0000h (Block Unprotected)
0001h (Block Protected)
Data (DQ15-DQ0)
Description
A3
0
0
0
0
1
1
1
1
0
8822h
0020h
BCR
PRD
A2
0
0
1
1
0
0
1
1
0
A1
0
1
0
1
0
1
0
1
0

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