M58LW032C110ZA6 STMICROELECTRONICS [STMicroelectronics], M58LW032C110ZA6 Datasheet - Page 25

• Manufacturer Part Number: M58LW032C110ZA6
• Description: 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Figure 8. Protection Register Memory Map
Table 9. Program, Erase Times and Program Erase Endurance Cycles
Note: 1. Typical values measured at room temperature and nominal voltages.
Block (1Mb) Erase
Chip Program (Write to Buffer)
Chip Erase Time
Program Write Buffer
Word/Byte Program Time
(Word/Byte Program command)
Program Suspend Latency Time
Erase Suspend Latency Time
Block Protect Time
Blocks Unprotect Time
Program/Erase Cycles (per block)
Data Retention
2. Sampled, but not 100% tested.
3. Effective byte programming time 6µs, effective word programming time 12µs.
4. Maximum value measured at worst case conditions for both temperature and V
5. Maximum value measured at worst case conditions for both temperature and V
Parameters
ADDRESS
WORD
88h
85h
84h
81h
80h
Protection Register Lock
Unique device number
User Programmable
100,000
Min
20
M58LW032C
1
Typ
192
0.75
1.2
24
37
16
18
DD
DD
1
1
0
(1,2)
(3)
.
after 100,000 program/erase cycles.
Max
110
576
1.2
4.8
48
20
25
30
72
(4)
(4)
(4)
(5)
(5)
(5)
(5)
(2)
(4)
(4)
M58LW032C
cycles
years
Unit
µs
µs
µs
µs
µs
s
s
s
s
AI05501
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