FDD8896_12 FAIRCHILD [Fairchild Semiconductor], FDD8896_12 Datasheet - Page 4

• Manufacturer Part Number: FDD8896_12
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

FDD8896_F085 Rev. C2
Typical Characteristics
Figure 9. Drain to Source On Resistance vs Gate
Figure 5. Forward Bias Safe Operating Area
100
1000
80
60
40
20
100
0
0.1
10
14
12
10
1.5
8
6
4
1
1
2
Figure 7. Transfer Characteristics
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
V
DD
SINGLE PULSE
T
T
I
OPERATION IN THIS
D
J
C
LIMITED BY r
T
= MAX RATED
= 15V
= 1A
= 25
J
Voltage and Drain Current
= 175
AREA MAY BE
I
o
D
C
V
V
= 35A
GS
V
DS
o
2.0
GS
C
, GATE TO SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
4
, GATE TO SOURCE VOLTAGE (V)
DS(ON)
T
J
= 25
o
C
2.5
6
10
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
T
C
= 25°C unless otherwise noted
T
J
3.0
= -55
8
o
C
10ms
10μs
100μs
1ms
DC
3.5
60
10
4
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
100
500
100
Figure 10. Normalized Drain to Source On
Figure 6. Unclamped Inductive Switching
80
60
40
20
10
1.6
1.4
1.2
1.0
0.8
0.6
0
1
0.01
Resistance vs Junction Temperature
0
Figure 8. Saturation Characteristics
-80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80μs
T
If R = 0
t
If R ≠ 0
t
AV
AV
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
C
V
= 25
GS
= (L)(I
= (L/R)ln[(I
V
= 10V
-40
GS
o
C
V
AS
= 5V
DS
T
)/(1.3*RATED BV
0.1
0.2
J
t
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
AV
AS
, TIME IN AVALANCHE (ms)
0
*R)/(1.3*RATED BV
Capability
STARTING T
40
0.4
1
DSS
J
= 150
80
- V
STARTING T
DD
DSS
o
)
V
C
- V
GS
120
www.fairchildsemi.com
DD
0.6
= 10V, I
10
o
C)
) +1]
V
V
GS
J
V
GS
= 25
GS
160
= 4V
D
= 2.5V
= 35A
= 3V
o
C
100
200
0.8