MMBD1203_L99Z

Manufacturer Part NumberMMBD1203_L99Z
DescriptionRectifiers High Conductance Ultra Fast Diode
ManufacturerFairchild Semiconductor
MMBD1203_L99Z datasheet
 


Specifications of MMBD1203_L99Z

Product CategoryRectifiersRohsyes
ProductStandard Recovery RectifiersConfigurationDual Series
Reverse Voltage100 VForward Voltage Drop1.1 V at 0.3 A
Recovery Time4 nsForward Continuous Current0.2 A
Max Surge Current2 AReverse Current Ir0.05 uA
Mounting StyleSMD/SMTPackage / CaseSOT-23
Maximum Operating Temperature+ 150 CMinimum Operating Temperature- 55 C
Power Dissipation0.35 WFactory Pack Quantity750
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MMBD1201 / 1202 / 1203 / 1204 / 1205
Small Signal Diodes
3
1
SOT-23
Absolute Maximum Ratings*
Symbol
V
Maximum Repetitive Reverse Voltage
RRM
I
Average Rectified Forward Current
F(AV)
I
Non-repetitive Peak Forward Surge Current
FSM
T
Storage Temperature Range
STG
T
Operating Junction Temperature
J
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics
Symbol
P
Power Dissipation
D
R
Thermal Resistance, Junction to Ambient
θJA
© 2011 Fairchild Semiconductor Corporation
MMBD1201 / 1202 / 1203 / 1204 / 1205 Rev. C1
3
24
2
1
2
MARKING
MMBD1201 24
MMBD1202 25
MMBD1203 26
MMBD1204 27
MMBD1205 28
T
= 25°C unless otherwise noted
A
Parameter
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
T
= 25°C unless otherwise noted
A
Parameter
1
August 2011
Connection Diagram
3
3
1202
1201
2NC
1
1NC
2
3
3
1203
1204
2
1
2
1
3
1205
1
2
Value
Units
100
200
mA
1.0
2.0
-55 to +150
150
Value
Units
350
mW
°C/W
357
www.fairchildsemi.com
V
A
A
°C
°C

MMBD1203_L99Z Summary of contents

  • Page 1

    ... These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol P Power Dissipation D R Thermal Resistance, Junction to Ambient θJA © 2011 Fairchild Semiconductor Corporation MMBD1201 / 1202 / 1203 / 1204 / 1205 Rev MARKING MMBD1201 24 MMBD1202 25 ...

  • Page 2

    ... Forward Current, I Figure 3. Forward Voltage vs Forward Current VF - 1.0 to 100 uA © 2011 Fairchild Semiconductor Corporation MMBD1201 / 1202 / 1203 / 1204 / 1205 Rev 25°C unless otherwise noted A Test Conditions I = 100μ 1.0mA 10mA ...

  • Page 3

    ... Ta 3.5 3.0 2.5 2.0 1.5 1 Reverse Current [mA] Figure 7. Reverse Recovery Time vs Reverse Current TRR - © 2011 Fairchild Semiconductor Corporation MMBD1201 / 1202 / 1203 / 1204 / 1205 Rev. C1 (Continued) 1.3 1.2 1.1 1.0 100 200 300 500 Figure 6. Total Capacitance vs Reverse Voltage 400 300 ...

  • Page 4

    ... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. 2Cool FlashWriter FPS AccuPower F-PFS Auto-SPM FRFET AX-CAP * ® Global Power Resource BitSiC Green FPS ...