MMBD1203_L99Z Fairchild Semiconductor, MMBD1203_L99Z Datasheet - Page 2

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MMBD1203_L99Z

Manufacturer Part Number
MMBD1203_L99Z
Description
Rectifiers High Conductance Ultra Fast Diode
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MMBD1203_L99Z

Product Category
Rectifiers
Rohs
yes
Product
Standard Recovery Rectifiers
Configuration
Dual Series
Reverse Voltage
100 V
Forward Voltage Drop
1.1 V at 0.3 A
Recovery Time
4 ns
Forward Continuous Current
0.2 A
Max Surge Current
2 A
Reverse Current Ir
0.05 uA
Mounting Style
SMD/SMT
Package / Case
SOT-23
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Power Dissipation
0.35 W
Factory Pack Quantity
750
© 2011 Fairchild Semiconductor Corporation
MMBD1201 / 1202 / 1203 / 1204 / 1205 Rev. C1
Electrical Characteristics
Typical Performance Characteristics
Symbol
Figure 3. Forward Voltage vs Forward Current
450
400
350
300
250
V
V
C
I
150
140
130
120
110
t
Figure 1. Reverse Voltage vs Reverse Current
R
rr
R
F
T
1
1
Ta= 25 C
Ta= 25 C
2
2
°
°
Breakdown Voltage
Forward Voltage
Reverse Leakage
Total Capacitance
Reverse Recovery Time
3
VF - 1.0 to 100 uA
3
Forward Current, I
Reverse Current, I
BV - 1.0 to 100uA
5
5
Parameter
10
10
F
R
20
20
[uA]
T
[uA]
A
= 25°C unless otherwise noted
30
30
50
50
I
I
I
I
I
I
V
V
V
V
I
R
R
F
F
F
F
F
F
R
R
R
R
L
= 1.0mA
= 10mA
= 100mA
= 200mA
= 300mA
= 100μA
= I
100
100
= 100Ω
= 20V
= 50V
= 50V, T
= 0, f = 1.0MHz
Test Conditions
R
= 10mA, I
2
A
= 150°C
300
250
200
150
100
700
650
600
550
500
450
Figure 2. Reverse Current vs Reverse Voltage
Figure 4. Forward Voltage vs Forward Current
50
RR
0
10
0.1
= 1.0mA
Ta= 25 C
Ta= 25 C
0.2
°
°
0.3
Forward Current, I
Reverse Voltage, V
20
VF - 0.1 to 10 mA
IR - 10 to 100 V
0.5
Min.
0.87
100
550
660
820
-
30
1
F
R
[mA]
2
Max.
[V]
600
740
920
50
1.0
1.1
5.0
2.0
4.0
25
50
3
70
5
www.fairchildsemi.com
Units
100
mV
mV
mV
10
nA
nA
μA
pF
ns
V
V
V

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