FDMA910PZ Fairchild Semiconductor, FDMA910PZ Datasheet

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FDMA910PZ

Manufacturer Part Number
FDMA910PZ
Description
MOSFET P-CHAN -20V -9.4A
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDMA910PZ

Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
-20 V
Continuous Drain Current
- 9.4 A
Resistance Drain-source Rds (on)
20 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
MicroFET 2 x 2
Minimum Operating Temperature
- 55 C
Power Dissipation
2.4 W
©2012 Fairchild Semiconductor Corporation
FDMA910PZ Rev.C2
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMA910PZ
Single P-Channel PowerTrench
-20 V, -9.4 A, 20 mΩ
Features
V
V
I
P
T
R
R
D
DS
GS
D
J
θJA
θJA
Max r
Max r
Max r
Low Profile - 0.8 mm maximum in the new package MicroFET
2x2 mm
HBM ESD protection level > 2.8k V typical (Note 3)
Free from halogenated compounds and antimony oxides
RoHS Compliant
, T
Drain
Symbol
Device Marking
STG
Pin 1
DS(on)
DS(on)
DS(on)
910
MicroFET 2X2 (Bottom View)
= 20 mΩ at V
= 24 mΩ at V
= 34 mΩ at V
D
Drain to Source Voltage
Gate to Source Voltage
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
D
D
GS
GS
GS
D
S
= -4.5 V, I
= -2.5 V, I
= -1.8 V, I
FDMA910PZ
-Continuous
-Pulsed
Device
G
D
D
D
= -9.4 A
= -8.6 A
= -7.2 A
T
A
Source
= 25 °C unless otherwise noted
Parameter
MicroFET 2X2
Package
®
MOSFET
1
T
T
T
General Description
This device is designed specifically for battery charge or load
switching
applications.It features a MOSFET with low on-state resistance
and zener diode protection against ESD. The MicroFET 2X2
package offers exceptional thermal performance for its physical
size and is well suited to linear mode applications.
A
A
A
= 25°C
= 25°C
= 25°C
G
D
D
1
2
3
Reel Size
in
7”
Bottom Drain Contact
cellular
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
handset
Tape Width
12mm
-55 to +150
and
Ratings
-9.4
145
-20
-45
2.4
0.9
±8
52
6
5
4
other
D
D
S
www.fairchildsemi.com
April 2012
3000 units
Quantity
ultraportable
Units
°C/W
°C
W
V
V
A

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FDMA910PZ Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 910 FDMA910PZ ©2012 Fairchild Semiconductor Corporation FDMA910PZ Rev.C2 ® MOSFET General Description = -9.4 A This device is designed specifically for battery charge or load D switching = -8 applications.It features a MOSFET with low on-state resistance = -7 ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2012 Fairchild Semiconductor Corporation FDMA910PZ Rev. °C unless otherwise noted J Test Conditions = -250 μ ...

Page 3

... Junction Temperature 45 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMA910PZ Rev. °C unless otherwise noted -1 -1 μ s 1.5 2 100 125 150 ...

Page 4

... Source Voltage 1000 100 10 SINGLE PULSE 145 C/W θ 0 Figure 11. Single Pulse Maximum Power Dissipation ©2012 Fairchild Semiconductor Corporation FDMA910PZ Rev. °C unless otherwise noted J 5000 = -8 V 1000 100 0.1 0.01 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMA910PZ Rev. °C unless otherwise noted J SINGLE PULSE 145 C/W θ RECTANGULAR PULSE DURATION (sec ...

Page 6

... PLANE PIN #1 IDENT 0.33 0.20 0.65 A. DOES NOT FULLY CONFORM TO JEDEC REGISTRATION MO-229 DATED AUG/2003 B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994 D. DRAWING FILENAME: MKT-MLP06Lrev2. ©2012 Fairchild Semiconductor Corporation FDMA910PZ Rev.C2 2.000 2.000 0. RECOMMENDED LAND PATTERN OPT 1 (0.20) C (0.30) 1.000 0.800 ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FDMA910PZ Rev.C2 ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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