FDMA910PZ Fairchild Semiconductor, FDMA910PZ Datasheet - Page 3

• Manufacturer Part Number: FDMA910PZ
• Description: MOSFET P-CHAN -20V -9.4A
• Manufacturer: Fairchild Semiconductor

Specifications of FDMA910PZ

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: -20 V
• Continuous Drain Current: - 9.4 A
• Resistance Drain-source Rds (on): 20 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MicroFET 2 x 2
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.4 W

©2012 Fairchild Semiconductor Corporation
FDMA910PZ Rev.C2
Typical Characteristics
45
30
15
1.4
1.3
1.2
1.1
1.0
0.9
0.8
45
30
15
Figure 3. Normalized On- Resistance
0
0.5
Figure 1.
0
0.0
-75
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
V
GS
I
V
GS
D
GS
V
V
-50
= -9.4 A
vs Junction Temperature
GS
= -2.5 V
DS
-V
= -3.5 V
= -4.5 V
-V
DS
= -5 V
= -4.5 V
T
GS
, DRAIN TO SOURCE VOLTAGE (V)
-25
On-Region Characteristics
J
0.5
,
, GATE TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE
1.0
0
T
J
= 150
25
μ
s
1.0
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
C
V
50
T
GS
T
J
J
= 25 °C unless otherwise noted
= -1.5 V
= -55
1.5
75
T
J
o
1.5
(
C
= 25
o
100 125 150
C
V
)
GS
o
C
= -1.8 V
μ
s
2.0
2.0
3
0.001
0.01
100
0.1
60
45
30
15
10
0
1
3
2
1
0
Figure 2.
Figure 4.
1.0
0.0
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
Figure 6.
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
GS
-V
= 0 V
T
1.5
J
0.2
= -1.5 V
SD
= 150
-
V
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
On-Resistance vs Gate to
GS
-
I
Source Voltage
D
Source to Drain Diode
,
2.0
o
,
GATE TO SOURCE VOLTAGE (V)
C
DRAIN CURRENT (A)
0.4
15
2.5
V
V
T
GS
GS
0.6
μ
J
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
s
= -55
= -3.5 V
= -1.8 V
T
3.0
J
= 25
o
C
I
D
0.8
30
o
= -9.4 A
C
3.5
V
T
GS
J
T
V
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J
= 125
GS
1.0
= 25
= -2.5 V
4.0
= -4.5 V
o
o
μ
C
C
s
4.5
1.2
45