STP100N10F7 STMicroelectronics, STP100N10F7 Datasheet - Page 10

• Manufacturer Part Number: STP100N10F7
• Description: MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 150W
• Manufacturer: STMicroelectronics

Specifications of STP100N10F7

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Resistance Drain-source Rds (on): 0.0068 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Fall Time: 16 ns
• Gate Charge Qg: 56 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 150 W
• Rise Time: 40 ns
• Typical Turn-off Delay Time: 46 ns

Package mechanical data
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Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
®
packages, depending on their level of environmental compliance. ECOPACK
is an ST trademark.
DocID023737 Rev 3
STD100N10F7, STF100N10F7, STP100N10F7
®