STP100N10F7 STMicroelectronics, STP100N10F7 Datasheet - Page 4

• Manufacturer Part Number: STP100N10F7
• Description: MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 150W
• Manufacturer: STMicroelectronics

Specifications of STP100N10F7

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Resistance Drain-source Rds (on): 0.0068 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Fall Time: 16 ns
• Gate Charge Qg: 56 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 150 W
• Rise Time: 40 ns
• Typical Turn-off Delay Time: 46 ns

Electrical characteristics
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Electrical characteristics
(T
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
t
t
C
I
I
DS(on)
C
C
Q
Q
d(on)
d(off)
GS(th)
DSS
GSS
Q
oss
t
t
rss
iss
gd
gs
r
f
g
=25 °C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source breakdown
voltage (V
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on-
resistance
DS
= 0)
Parameter
Parameter
Parameter
GS
GS
= 0)
= 0)
DocID023737 Rev 3
Table 7. Switching times
Table 5. On/off states
Table 6. Dynamic
V
R
Figure 17
V
V
V
V
Figure 18
I
V
V
V
V
For DPAK and TO-220
V
For TO-220-FP
V
D
DS
GS
DD
GS
DD
G
DS
DS
GS
DS
GS
GS
= 250 μA
=4.7 Ω, V
=50 V, I
=0
=50 V, I
= V
= 10 V, I
= 10 V, I
=50 V, f=1 MHz,
=10 V
= 100 V
= 100 V; T
= 20 V
Test conditions
Test conditions
Test conditions
STD100N10F7, STF100N10F7, STP100N10F7
GS
, I
D
D
D
GS
D
D
= 40 A,
= 80 A
= 250 μA
= 40 A
= 22.5 A
C
= 10 V
=125 °C
Min.
100
Min.
Min.
2
-
-
-
-
-
-
-
-
-
-
0.0068
4369
Typ.
Typ.
Typ.
823
36
61
26
13
27
40
46
15
Max.
Max.
0.008
Max.
100
100
-
-
-
-
-
-
-
-
-
-
1
4
-
Unit
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
μA
μA
nA
V
V
Ω