STP100N10F7 STMicroelectronics, STP100N10F7 Datasheet - Page 7

• Manufacturer Part Number: STP100N10F7
• Description: MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 150W
• Manufacturer: STMicroelectronics

Specifications of STP100N10F7

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Resistance Drain-source Rds (on): 0.0068 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Fall Time: 16 ns
• Gate Charge Qg: 56 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 150 W
• Rise Time: 40 ns
• Typical Turn-off Delay Time: 46 ns

STD100N10F7, STF100N10F7, STP100N10F7
Figure 10. Normalized V
Figure 12. Gate charge vs gate-source voltage
V
(BR)DSS
300
250
200
150
100
(A)
(norm)
1.04
0.98
0.96
0.94
1.02
50
V
I
(V)
D
0
GS
10
12
Figure 8. Output characteristics
-55
0
2
0
8
6
4
1
0
-30
1
-5
20
20 45
V
I
DD
D
2
=80A
=50V
I
D
(BR)DSS
=1mA
V
40
GS
70
=10V
3
95 120
vs temperature
60
4
6V
5V
T
Q
9V
8V
7V
J
AM15757v1
DocID023737 Rev 3
(°C)
g
V
(nC)
AM15747v1
AM15758v1
DS
(V)
Figure 11. Static drain-source on-resistance
R
DS(on)
(mΩ)
5000
3000
2000
4000
1000
10.0
14.0
12.0
250
150
300
200
100
(pF)
Figure 13. Capacitance variations
(A)
8.0
6.0
4.0
Figure 9. Transfer characteristics
0.0
2.0
50
I
C
D
0
0
0
2
0
10
3
20
20
4
V
DS
V
30
5
40
=5V
GS
=10V
40 50 60 70 80
6
Electrical characteristics
60
7
8
80
9 10
100
V
V
GS
DS
I
(V)
AM15745v1
AM15748v1
AM15759v1
(V)
D
(A)
Coss
Ciss
Crss
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