STP100N10F7 STMicroelectronics, STP100N10F7 Datasheet - Page 18

• Manufacturer Part Number: STP100N10F7
• Description: MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 150W
• Manufacturer: STMicroelectronics

Specifications of STP100N10F7

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Resistance Drain-source Rds (on): 0.0068 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Fall Time: 16 ns
• Gate Charge Qg: 56 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 150 W
• Rise Time: 40 ns
• Typical Turn-off Delay Time: 46 ns

Packaging mechanical data
5
18/21
Packaging mechanical data
Dim.
D1
A0
B0
B1
K0
P0
P1
P2
W
D
R
E
F
T
Min.
10.4
1.65
2.55
0.25
15.7
6.8
1.5
1.5
7.4
3.9
7.9
1.9
40
Table 12. DPAK (TO-252) tape and reel mechanical data
Tape
mm
DocID023737 Rev 3
Max.
10.6
12.1
1.85
2.75
0.35
16.3
1.6
7.6
4.1
8.1
2.1
7
STD100N10F7, STF100N10F7, STP100N10F7
Dim.
G
A
B
C
D
N
T
Base qty.
Bulk qty.
Min.
12.8
20.2
16.4
1.5
50
Reel
mm
Max.
2500
2500
13.2
18.4
22.4
330