STP100N10F7 STMicroelectronics, STP100N10F7 Datasheet - Page 11

• Manufacturer Part Number: STP100N10F7
• Description: MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 150W
• Manufacturer: STMicroelectronics

Specifications of STP100N10F7

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Resistance Drain-source Rds (on): 0.0068 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Fall Time: 16 ns
• Gate Charge Qg: 56 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 150 W
• Rise Time: 40 ns
• Typical Turn-off Delay Time: 46 ns

STD100N10F7, STF100N10F7, STP100N10F7
Dim.
(L1)
A1
A2
D1
E1
V2
b4
e1
L2
L4
c2
R
A
D
E
H
b
c
e
L
Table 9. DPAK (TO-252) mechanical data
Min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
1.00
0.60
0°
DocID023737 Rev 3
Typ.
5.10
4.70
2.28
2.80
0.80
0.20
mm
Package mechanical data
10.10
Max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
1.50
1.00
8°
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