STP100N10F7 STMicroelectronics, STP100N10F7 Datasheet - Page 6

• Manufacturer Part Number: STP100N10F7
• Description: MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 150W
• Manufacturer: STMicroelectronics

Specifications of STP100N10F7

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Resistance Drain-source Rds (on): 0.0068 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Fall Time: 16 ns
• Gate Charge Qg: 56 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 150 W
• Rise Time: 40 ns
• Typical Turn-off Delay Time: 46 ns

Electrical characteristics
2.1
6/21
Figure 4. Safe operating area for TO-220FP
Figure 6. Safe operating area for TO-220
Figure 2. Safe operating area for DPAK
100
100
100
(A)
(A)
(A)
10
0.1
10
0.1
10
0.1
I
I
I
D
D
D
1
1
1
0.1
0.1
0.1
Electrical characteristics (curves)
1
1
1
Tj=175°C
Tc=25°C
Single pulse
Tj=175°C
Tc=25°C
Single pulse
Tj=175°C
Tc=25°C
Single pulse
10
10
10
100
100
100
V
V
V
DS
DS
DS
(V)
(V)
(V)
DocID023737 Rev 3
100µs
100µs
100µs
10ms
1ms
10ms
1ms
10ms
1ms
AM15754v1
AM15755v1
AM15756v1
Figure 5. Thermal impedance for TO-220FP
Figure 7. Thermal impedance for TO-220
10
10
STD100N10F7, STF100N10F7, STP100N10F7
Figure 3. Thermal impedance for DPAK
K
-2
10
-1
-5
0.2
0.1
δ=0.5
10
-4
Single pulse
10
-3
10
-2
0.05
0.02
0.01
10
-1
t
p
(s)
AM15761v1