STP100N10F7 STMicroelectronics, STP100N10F7 Datasheet - Page 8

• Manufacturer Part Number: STP100N10F7
• Description: MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 150W
• Manufacturer: STMicroelectronics

Specifications of STP100N10F7

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Resistance Drain-source Rds (on): 0.0068 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Fall Time: 16 ns
• Gate Charge Qg: 56 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 150 W
• Rise Time: 40 ns
• Typical Turn-off Delay Time: 46 ns

Electrical characteristics
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Figure 14. Normalized gate threshold voltage vs
Figure 16. Source-drain diode forward
V
V
GS(th)
(norm)
1.04
SD
0.98
1.02
0.96
0.94
0.92
0.9
0.8
0.7
0.6
0.5
(V)
1.1
-55
1
1
0
-30
20
-5
characteristics
temperature
T
20 45
J
=150°C
40
I
D
T
= 250 µA
J
60
=-55°C
70
95 120
80
T
J
=25°C
100
T
J
(°C)
DocID023737 Rev 3
AM15749v1
AM15746v1
I
SD
(A)
STD100N10F7, STF100N10F7, STP100N10F7
Figure 15. Normalized on-resistance vs
R
DS(on)
(norm)
1.8
1.6
1.4
1.2
0.8
0.6
0.4
2
-55
1
-30
-5
temperature
20 45
I
D
=40A
70
95
120
T
J
(°C)
AM15760v1