PSMN2R8-80BS,118 NXP Semiconductors, PSMN2R8-80BS,118 Datasheet
PSMN2R8-80BS,118
Manufacturer Part Number
PSMN2R8-80BS,118
Description
MOSFET Std N-chanMOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN2R8-80BS118.pdf
(14 pages)
Specifications of PSMN2R8-80BS,118
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Resistance Drain-source Rds (on)
3 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
D2PAK
Minimum Operating Temperature
- 55 C
Power Dissipation
306 W
Factory Pack Quantity
800
1. Product profile
Table 1.
[1]
Symbol
V
I
P
T
Static characteristics
R
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
D
j
DS
tot
DS(AL)S
DSon
GD
G(tot)
Continuous current is limited by package.
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
gate-drain charge
total gate charge
non-repetitive
drain-source
avalanche energy
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
PSMN2R8-80BS
N-channel 80 V, 3 mΩ standard level FET in D2PAK
Rev. 2 — 29 February 2012
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switch
Conditions
T
T
T
V
see
V
see
V
see
V
V
j
mb
mb
GS
GS
GS
GS
sup
≥ 25 °C; T
Figure
Figure 13
Figure
= 25 °C; V
= 25 °C; see
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; T
≤ 80 V; R
12; see
14; see
j
D
D
D
≤ 175 °C
j(init)
GS
GS
= 25 A; T
= 25 A; T
= 75 A; V
= 50 Ω; unclamped
Figure 2
= 10 V; see
= 25 °C; I
Figure 13
Figure 15
j
j
DS
= 100 °C;
= 25 °C;
= 40 V;
D
= 120 A;
Figure 1
Suitable for standard level gate drive
Motor control
Server power supplies
[1]
-55
-
Min
-
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
4.21
2.55
27
139
-
Max
80
120
306
175
5
3
-
-
676
nC
Unit
V
A
W
°C
mΩ
mΩ
nC
mJ
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