PSMN2R8-80BS,118 NXP Semiconductors, PSMN2R8-80BS,118 Datasheet - Page 4

• Manufacturer Part Number: PSMN2R8-80BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R8-80BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 3 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 306 W
• Factory Pack Quantity: 800

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN2R8-80BS
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
Thermal characteristics
δ = 0.5
0.05
0.02
0.2
0.1
single shot
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction
to ambient
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 2 — 29 February 2012
Conditions
see
minimum footprint; mounted on a
printed-circuit board
Figure 4
10
-3
N-channel 80 V, 3 mΩ standard level FET in D2PAK
10
-2
PSMN2R8-80BS
Min
-
-
10
P
-1
Typ
0.22
50
tp
t
T
p (s)
© NXP B.V. 2012. All rights reserved.
003aag773
δ =
Max
0.49
-
tp
T
t
1
Unit
K/W
K/W
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