PSMN2R8-80BS,118 NXP Semiconductors, PSMN2R8-80BS,118 Datasheet - Page 10

• Manufacturer Part Number: PSMN2R8-80BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R8-80BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 3 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 306 W
• Factory Pack Quantity: 800

NXP Semiconductors
7. Package outline
Fig 18. Package outline SOT404 (D2PAK)
PSMN2R8-80BS
Product data sheet
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT404
4.50
4.10
A
H D
1.40
1.27
A 1
D
D 1
0.85
0.60
b
IEC
0.64
0.46
c
max.
1
D
11
e
All information provided in this document is subject to legal disclaimers.
E
JEDEC
1.60
1.20
D 1
2
e
REFERENCES
Rev. 2 — 29 February 2012
10.30
9.70
E
3
0
b
2.54
e
JEITA
scale
2.5
2.90
2.10
N-channel 80 V, 3 mΩ standard level FET in D2PAK
L p
5 mm
15.80
14.80
H D
mounting
2.60
2.20
Q
base
L p
PSMN2R8-80BS
A 1
Q
PROJECTION
c
EUROPEAN
A
© NXP B.V. 2012. All rights reserved.
ISSUE DATE
05-02-11
06-03-16
SOT404
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