PSMN2R8-80BS,118 NXP Semiconductors, PSMN2R8-80BS,118 Datasheet - Page 8

• Manufacturer Part Number: PSMN2R8-80BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R8-80BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 3 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 306 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN2R8-80BS
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
R
(mΩ)
V
DSon
(V)
GS
7.5
2.5
10
10
8
6
4
2
0
5
0
of drain current; typical values
charge; typical values
0
0
V
GS
(V) = 5
20
V
DS
40
= 16V
40
40V
80
64V
60
8
120
10
6.5
80
All information provided in this document is subject to legal disclaimers.
Q
003aad432
003aaf609
G
I
D
(nC)
(A)
5.5
20
6
100
160
Rev. 2 — 29 February 2012
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
N-channel 80 V, 3 mΩ standard level FET in D2PAK
(pF)
C
10
10
10
10
10
5
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
PSMN2R8-80BS
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
© NXP B.V. 2012. All rights reserved.
DS
003aaf610
003aaa508
(V)
C
C
C
oss
rss
iss
10
2
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