PSMN2R8-80BS,118 NXP Semiconductors, PSMN2R8-80BS,118 Datasheet - Page 6

• Manufacturer Part Number: PSMN2R8-80BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R8-80BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 3 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 306 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN2R8-80BS
Product data sheet
Table 6.
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
g
16000
12000
(pF)
fs
8000
4000
250
200
150
100
C
50
0
0
10
drain current; typical values
function of gate-source voltage; typical values
Forward transconductance as a function of
Input and reverse transfer capacitances as a
0
-1
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
1
…continued
40
10
60
V
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
C
C
GS
003aaf606
DS
003aaf602
= 25 A; V
= 25 A; dI
iss
rss
I
D
(V)
Figure 17
(A)
= 20 V
10
Rev. 2 — 29 February 2012
80
2
GS
S
/dt = 100 A/µs; V
= 0 V; T
Fig 6.
Fig 8.
N-channel 80 V, 3 mΩ standard level FET in D2PAK
j
= 25 °C;
(A)
I
D
(A)
160
120
I
75
D
50
25
80
40
0
0
GS
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Transfer characteristics: drain current as a
Output characteristics: drain current as a
0
0
= 0 V;
10
0.5
6
8
T
j
2
PSMN2R8-80BS
= 175 ° C
5.5
Min
-
-
-
1
5
4
Typ
0.8
63
121
V
GS
1.5
T
V
© NXP B.V. 2012. All rights reserved.
j
(V) = 4
GS
= 25 ° C
V
003aad685
003aaf603
DS
(V)
Max
1.2
-
-
4.5
(V)
2
6
V
Unit
ns
nC
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