PSMN2R8-80BS,118 NXP Semiconductors, PSMN2R8-80BS,118 Datasheet - Page 7

• Manufacturer Part Number: PSMN2R8-80BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R8-80BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 3 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 306 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN2R8-80BS
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
R
(m Ω )
(A)
I
10
10
10
10
10
10
D
DSon
30
25
20
15
10
−1
−2
−3
−4
−5
−6
5
0
of gate-source voltage; typical values
gate-source voltage
Drain-source on-state resistance as a function
0
0
5
2
min
10
typ
4
15
max
V
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GS
V
003aag678
GS
(V)
03aa35
(V)
Rev. 2 — 29 February 2012
20
6
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normailzed drain-source on-state resistance
N-channel 80 V, 3 mΩ standard level FET in D2PAK
V
GS(th)
(V)
2.4
1.8
1.2
0.6
a
5
4
3
2
1
0
3
0
−60
-60
junction temperature
factor as a function of junction temperature
0
0
PSMN2R8-80BS
60
60
max
min
typ
120
120
© NXP B.V. 2012. All rights reserved.
003aad280
T
T
003aaf608
j
j
( ° C)
(°C)
180
180
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