PSMN2R8-80BS,118 NXP Semiconductors, PSMN2R8-80BS,118 Datasheet - Page 3

• Manufacturer Part Number: PSMN2R8-80BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R8-80BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 3 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 306 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN2R8-80BS
Product data sheet
Fig 1.
Fig 3.
(A)
I
(A)
D
10
I
10
10
D
240
180
120
10
60
-1
3
2
1
0
10
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
(1)
Limit R
100
DSon
= V
1
DS
/ I
150
D
All information provided in this document is subject to legal disclaimers.
T
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003aaf615
( ° C)
Rev. 2 — 29 February 2012
200
10
Fig 2.
DC
N-channel 80 V, 3 mΩ standard level FET in D2PAK
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
50
10
PSMN2R8-80BS
2
10 ms
100 ms
t
100 μ s
1 ms
p
=10 μ s
100
V
DS
(V)
150
© NXP B.V. 2012. All rights reserved.
003aag771
T
mb
03aa16
(°C)
10
200
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