NDT452AP_J23Z Fairchild Semiconductor, NDT452AP_J23Z Datasheet

NDT452AP_J23Z

Manufacturer Part Number

NDT452AP_J23Z

Description

MOSFET P-Channel FET Enhancement Mode

Manufacturer

Fairchild Semiconductor

Datasheet

1.NDT452AP_J23Z.pdf (7 pages)

Specifications of NDT452AP_J23Z

Product Category

MOSFET

Rohs

yes

Transistor Polarity

P-Channel

Drain-source Breakdown Voltage

- 30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

- 5 A

Resistance Drain-source Rds (on)

0.065 Ohms

Configuration

Single Dual Drain

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOT-223

Fall Time

19 ns

Minimum Operating Temperature

- 65 C

Power Dissipation

3 W

Rise Time

20 ns

Factory Pack Quantity

2500

Typical Turn-off Delay Time

40 ns

Current page: 1 of 7
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* Order option J23Z for cropped center drain lead.

Symbol

THERMAL CHARACTERISTICS

Absolute Maximum Ratings

________________________________________________________________________________

DSS

GSS

NDT452AP

P-Channel Enhancement Mode Field Effect Transistor

General Description

Power SOT P-Channel enhancement mode power field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance

and provide superior switching performance. These devices

are particularly suited for low voltage applications such as

notebook computer power management and DC motor

control.

STG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

Maximum Power Dissipation

Operating and Storage Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

- Pulsed

= 25°C unless otherwise noted

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1a)

(Note 1)

Features

-5A, -30V. R

High density cell design for extremely low R

High power and current handling capability in a widely used

surface mount package.

DS(ON)

NDT452AP

-65 to 150

= 0.1

= 0.065

- 15

±20

-30

1.3

1.1

-5

@ V

= -4.5V.

= -10V

DS(ON)

June 1996

NDT452AP Rev. B1

Units

°C/W

°C

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NDT452AP_J23Z Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient R JA Thermal Resistance, Junction-to-Case Order option J23Z for cropped center drain lead. © 1997 Fairchild Semiconductor Corporation Features -5A, -30V. R High density cell design for extremely low R High power and current handling capability in a widely used surface mount package. D ...

Page 2

Electrical Characteristics (T = 25°C unless otherwise noted) A Symbol Parameter OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate - Body Leakage, Forward GSSF I Gate - Body Leakage, Reverse GSSR ON ...

Page 3

Electrical Characteristics (T = 25°C unless otherwise noted) A Symbol Parameter DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I Maximum Continuous Drain-Source Diode Forward Current S Drain-Source Diode Forward Voltage Reverse Recovery Time rr Notes ...

Page 4

Typical Electrical Characteristics - -10V GS -6.0 -5.0 -15 -4.5 - DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -5. -10V 1.4 GS 1.2 1 ...

Page 5

Typical Electrical Characteristics 1 -250µA 1.08 D 1.06 1.04 1.02 1 0.98 0.96 0.94 -50 - JUNCTION TEMPERATURE (°C) J Figure 7. Breakdown Voltage Variation with Temperature ...

Page 6

Typical Thermal Characteristics -10V DRAIN CURRENT (A) D Figure 13. Transconductance Variation with Drain Current and Temperature ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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