NDT452AP_J23Z Fairchild Semiconductor, NDT452AP_J23Z Datasheet
NDT452AP_J23Z
Specifications of NDT452AP_J23Z
Related parts for NDT452AP_J23Z
NDT452AP_J23Z Summary of contents
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... Thermal Resistance, Junction-to-Ambient R JA Thermal Resistance, Junction-to-Case Order option J23Z for cropped center drain lead. © 1997 Fairchild Semiconductor Corporation Features -5A, -30V. R High density cell design for extremely low R High power and current handling capability in a widely used surface mount package. D ...
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Electrical Characteristics (T = 25°C unless otherwise noted) A Symbol Parameter OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate - Body Leakage, Forward GSSF I Gate - Body Leakage, Reverse GSSR ON ...
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Electrical Characteristics (T = 25°C unless otherwise noted) A Symbol Parameter DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I Maximum Continuous Drain-Source Diode Forward Current S Drain-Source Diode Forward Voltage Reverse Recovery Time rr Notes ...
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Typical Electrical Characteristics - -10V GS -6.0 -5.0 -15 -4.5 - DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -5. -10V 1.4 GS 1.2 1 ...
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Typical Electrical Characteristics 1 -250µA 1.08 D 1.06 1.04 1.02 1 0.98 0.96 0.94 -50 - JUNCTION TEMPERATURE (°C) J Figure 7. Breakdown Voltage Variation with Temperature ...
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Typical Thermal Characteristics -10V DRAIN CURRENT (A) D Figure 13. Transconductance Variation with Drain Current and Temperature ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...