FDB6670AL_Q Fairchild Semiconductor, FDB6670AL_Q Datasheet

FDB6670AL_Q

Manufacturer Part Number

FDB6670AL_Q

Description

MOSFET N-Channel PowerTrench

Manufacturer

Fairchild Semiconductor

Datasheet

1.FDP6670AL_Q.pdf (5 pages)

Specifications of FDB6670AL_Q

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

80 A

Resistance Drain-source Rds (on)

0.0065 Ohms at 10 V

Configuration

Single

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package / Case

TO-263AB

Fall Time

15 ns

Forward Transconductance Gfs (max / Min)

115 S

Minimum Operating Temperature

- 65 C

Power Dissipation

68 W

Rise Time

13 ns

Typical Turn-off Delay Time

42 ns

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FDP6670AL/FDB6670AL

N-Channel Logic Level PowerTrench

General Description

This N-Channel Logic Level MOSFET has been

designed specifically to improve the overall efficiency of

DC/DC

conventional switching PWM controllers.

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power

supply designs with higher overall efficiency.

It has been optimized for low gate charge, low R

and fast switching speed.

2003 Fairchild Semiconductor Corporation

DS(ON)

Absolute Maximum Ratings

Symbol

Thermal Characteristics

Package Marking and Ordering Information

DSS

GSS

, T

Device Marking

STG

specifications.

FDB6670AL

FDP6670AL

converters

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Total Power Dissipation @ T

Operating and Storage Junction Temperature Range

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

using

TO-220

FDP Series

either

– Continuous

– Pulsed

FDB6670AL

FDP6670AL

Device

Parameter

synchronous

Derate above 25 C

= 25 C

DS(ON)

=25

C unless otherwise noted

Reel Size

Tube

13’’

(Note 1)

MOSFET

TO-263AB

FDB Series

Features

80 A, 30 V

Critical DC electrical parameters specified at

elevated temperature

High performance trench technology for extremely

low R

175 C maximum junction temperature rating

DS(ON)

Tape width

DS(ON)

–65 to +175

24mm

Ratings

n/a

0.45

62.5

240

2.2

= 6.5 m

= 8.5 m

FDP6670AL/FDB6670AL Rev D(W)

@ V

May 2003

= 10 V

= 4.5 V

Quantity

800 units

Units

W/ C

C/W

Related parts for FDB6670AL_Q

FDB6670AL_Q Summary of contents

Page 1

... JC R Thermal Resistance, Junction-to-Ambient JA Package Marking and Ordering Information Device Marking Device FDB6670AL FDB6670AL FDP6670AL FDP6670AL 2003 Fairchild Semiconductor Corporation MOSFET Features synchronous or Critical DC electrical parameters specified at elevated temperature High performance trench technology for extremely low R DS(ON) 175 C maximum junction temperature rating ...

Page 2

Electrical Characteristics Symbol Parameter Drain-Source Avalanche Ratings W Single Pulse Drain-Source DSS Avalanche Energy I Maximum Drain-Source Avalanche AR Current Off Characteristics BV Drain–Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS Coefficient Zero Gate Voltage Drain ...

Page 3

Typical Characteristics 100 4. 10V GS 6.0V 4. DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 80A D V =10V GS 1.4 1.2 1 0.8 ...

Page 4

Typical Characteristics 80A 10V DS 6 20V GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 1000 R LIMIT DS(ON) 100 10mS 100mS DC ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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