FDB6670AL_Q Fairchild Semiconductor, FDB6670AL_Q Datasheet - Page 4

• Manufacturer Part Number: FDB6670AL_Q
• Description: MOSFET N-Channel PowerTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDB6670AL_Q

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Resistance Drain-source Rds (on): 0.0065 Ohms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263AB
• Fall Time: 15 ns
• Forward Transconductance Gfs (max / Min): 115 S
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 68 W
• Rise Time: 13 ns
• Typical Turn-off Delay Time: 42 ns

Typical Characteristics
1000
10
100
8
6
4
2
0
Figure 9. Maximum Safe Operating Area.
10
1
0
Figure 7. Gate Charge Characteristics.
0.1
0.01
0.1
I
D
0.00001
1
= 80A
SINGLE PULSE
R
R
DS(ON)
V
JA
T
GS
A
= 2.2
= 25
10
= 10V
LIMIT
D = 0.5
o
o
C/W
C
V
0.2
DS
0.1
, DRAIN-SOURCE VOLTAGE (V)
0.05
0.02
Q
g
1
0.01
, GATE CHARGE (nC)
SINGLE PULSE
20
V
DS
= 10V
0.0001
20V
DC
Figure 11. Transient Thermal Response Curve.
100mS
30
10mS
15V
1mS
10
100µs
40
10µs
0.001
100
50
t
1
, TIME (sec)
4000
3000
2000
1000
5000
4000
3000
2000
1000
0
0.00001
0
0
Figure 8. Capacitance Characteristics.
C
Figure 10. Single Pulse Maximum
rss
0.01
5
0.0001
C
V
oss
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
0.001
t
1
, TIME (sec)
15
0.1
C
iss
0.01
Duty Cycle, D = t
T
R
FDP6670AL/FDB6670AL Rev D(W)
P(pk
J
R
20
JC
- T
JA
(t) = r(t) * R
A
SINGLE PULSE
R
= 2.2 °C/W
= P * R
t
1
JC
T
t
2
A
0.1
= 2.2°C/W
= 25°C
25
V
f = 1MHz
JA
GS
1
JA
(t)
/ t
= 0 V
2
1
1
30