2N7000_J61Z Fairchild Semiconductor, 2N7000_J61Z Datasheet

2N7000_J61Z

Manufacturer Part Number

2N7000_J61Z

Description

MOSFET TO-92

Manufacturer

Fairchild Semiconductor

Datasheet

1.2N7000_J61Z.pdf (7 pages)

Specifications of 2N7000_J61Z

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

0.2 A

Resistance Drain-source Rds (on)

5000 mOhms

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92-3

Minimum Operating Temperature

- 55 C

Power Dissipation

400 mW

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Absolute Maximum Ratings

Symbol

THERMAL CHARACTERISTICS

General Description

___________________________________________________________________________________________

These N-Channel enhancement mode field effect transistors

are produced using Fairchild's proprietary, high cell density,

DMOS technology. These products have been designed to

minimize on-state resistance while provide rugged, reliable,

and fast switching performance. They can be used in most

applications requiring up to 400mA DC and can deliver

pulsed currents up to 2A. These products are particularly

suited for low voltage, low current applications such as small

servo motor control, power MOSFET gate drivers, and other

switching applications.

2N7000 / 2N7002 / NDS7002A

N-Channel Enhancement Mode Field Effect Transistor

DSS

GSS

DGR

STG

Parameter

Drain-Source Voltage

Drain-Gate Voltage (R

Gate-Source Voltage - Continuous

Maximum Drain Current - Continuous

Maximum Power Dissipation

Derated above 25

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering

Purposes, 1/16" from Case for 10 Seconds

Thermal Resistance, Junction-to-Ambient

TO-92

2N7000

- Non Repetitive (tp < 50µs)

- Pulsed

< 1 M )

= 25°C unless otherwise noted

2N7002/NDS7002A

(TO-236AB)

2N7000

312.5

200

500

400

Features

3.2

High density cell design for low R

Voltage controlled small signal switch.

Rugged and reliable.

High saturation current capability.

-55 to 150

2N7002

115

800

200

300

625

1.6

-65 to 150

NDS7002A

DS(ON)

1500

280

300

417

2.4

November 1995

2N7000.SAM Rev. A1

mW/°C

Units

°C/W

°C

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2N7000_J61Z Summary of contents

Page 1

... Maximum Lead Temperature for Soldering L Purposes, 1/16" from Case for 10 Seconds THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient R JA © 1997 Fairchild Semiconductor Corporation Features High density cell design for low R Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. (TO-236AB) ...

Page 2

Electrical Characteristics T A Symbol Parameter OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate - Body Leakage, Forward GSSF I Gate - Body Leakage, Reverse GSSR ON CHARACTERISTICS (Note 1) V Gate ...

Page 3

Electrical Characteristics T A Symbol Parameter ON CHARACTERISTICS Continued (Note 1) I On-State Drain Current D(ON) g Forward Transconductance FS DYNAMIC CHARACTERISTICS C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss t Turn-On Time on t ...

Page 4

Typical Electrical Characteristics 10V GS 9 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 10V GS 1. 500m A D 1.5 ...

Page 5

Typical Electrical Characteristics 1 250µA D 1.075 1.05 1.025 1 0.975 0.95 0.925 -50 - JUNCTION TEM PERATURE (°C) J Figure 7. Breakdown Voltage Variation with Temperature ...

Page 6

Typical Electrical Characteristics 0.5 0.1 0. 10V GS SINGLE PULSE T = 25°C A 0.01 0.005 DRAIN-SOURCE VOLTAGE (V) DS Figure 13. 2N7000 Maximum Safe Operating Area 3 2 ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...

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