2N7000_J61Z Fairchild Semiconductor, 2N7000_J61Z Datasheet - Page 2

• Manufacturer Part Number: 2N7000_J61Z
• Description: MOSFET TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of 2N7000_J61Z

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.2 A
• Resistance Drain-source Rds (on): 5000 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92-3
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 400 mW

Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
V
DSS
GSSF
GSSR
GS(th)
DS(ON)
DS(ON)
DSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance V
Drain-Source On-Voltage
(Note 1)
T
A
= 25°C unless otherwise noted
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
GS
DS
DS
GS
GS
GS
GS
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
= 0 V, I
= 48 V, V
= 60 V, V
= 15 V, V
= 20 V, V
= -15 V, V
= -20 V, V
= V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 5.0 V, I
= 10 V, I
= 5.0 V, I
= 10 V, I
= 4.5 V, I
= 10 V, I
= 5.0 V, I
= 10 V, I
= 5.0 V, I
GS
GS
, I
, I
D
D
D
D
D
D
= 10 µA
= 1 mA
= 250 µA
D
D
D
D
D
D
GS
GS
DS
DS
D
D
D
DS
DS
= 500 mA
= 500 mA
= 500 mA
= 75 mA
= 50 mA
= 50 mA
= 500 mA
= 500mA
= 500mA
= 75 mA
= 50 mA
= 50 mA
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
T
T
T
T
T
T
T
J
J
J
J
J
J
J
=125°C
=125°C
=125°C
=100°C
=125°C
=125°C
=100C
NDS7002A
NDS7002A
NDS7002A
NDS7002A
NDS7002
NDS7002A
2N7000
2N7002
2N7000
2N7002
2N7000
2N7002
2N7000
2N7002
2N7000
2N7002
2N7000
2N7002
Typ e
All
A
Min
0.8
60
1
0.14
0.09
0.09
Typ
2.1
2.1
1.2
1.9
1.8
1.2
1.7
1.7
2.4
1.2
1.7
2.8
0.6
0.6
0.6
2
-100
13.5
13.5
3.75
0.15
Max
100
0.5
-10
2.5
5.3
7.5
7.5
3.5
2.5
0.4
1.5
10
1
1
1
3
5
9
2
3
5
1
2N7000.SAM Rev. A1
Units
mA
mA
µA
µA
nA
nA
nA
nA
V
V
V