2N7000_J61Z Fairchild Semiconductor, 2N7000_J61Z Datasheet - Page 6

• Manufacturer Part Number: 2N7000_J61Z
• Description: MOSFET TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of 2N7000_J61Z

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.2 A
• Resistance Drain-source Rds (on): 5000 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92-3
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 400 mW

Typical Electrical Characteristics
0.005
0.005
0.05
0.01
0.05
0.01
0.5
0.1
0.5
0.1
3
2
1
0.002
0.001
3
2
1
0.05
0.02
0.01
0.05
0.01
1
1
0.5
0.2
0.1
0.5
0.2
0.1
0.0001
0.0001
1
1
Figure 13. 2N7000 Maximum
Figure 15. NDS7000A Maximum
SINGLE PULSE
SINGLE PULSE
V
T
V
T
D = 0.5
0 .2
0.01
A
2
0.1
GS
A
2
0 .02
GS
0 .0 5
0.05
D = 0.5
Figure 17. SOT-23, 2N7002 / NDS7002A Transient Thermal Response Curve
= 25°C
0 .0 2
0.1
= 25°C
= 10V
0 .2
= 10V
Figure 16. TO-92, 2N7000 Transient Thermal Response Curve
0 .0 1
V
V
DS
Single Pulse
DS
, DRAIN-SOURCE VOLTAGE (V)
Safe Operating Area
, DRAIN-SOURCE VOLTAGE (V)
Single Pulse
Safe Operating Area
5
5
0.001
0.001
10
10
20
20
30
30
0.01
0.01
(continued)
60 80
60 80
t , TIME (sec)
0.1
0.1
t , TIME (sec)
1
1
0.005
0.05
0.01
0.5
0.1
3
2
1
1
SINGLE PULSE
Figure 14. 2N7002 Maximum
V
T
GS
A
2
= 25°C
= 10V
1
1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Safe Operating Area
5
10
P(pk)
10
P(pk)
10
R
T - T
R
R
T - T
Duty Cycle, D = t /t
J
R
Duty Cycle, D = t /t
J
JA
JA
JA
20
JA
t
1
A
t
1
A
(t) = r(t) * R
= (See Datasheet)
(t) = r(t) * R
= (See Datasheet)
t
= P * R
t
= P * R
2
30
2
JA
100
JA
1
100
60 80
1
(t)
JA
2
JA
(t)
2
2N7000.SAM Rev. A1
300
300