PBSS2540E T/R NXP Semiconductors, PBSS2540E T/R Datasheet - Page 3

• Manufacturer Part Number: PBSS2540E T/R
• Description: Transistors Bipolar - BJT LOW VCESAT (BLISS) TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS2540E T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 450 MHz
• Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-75
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS2540E,115

NXP Semiconductors
5. Limiting values
PBSS2540E_2
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Symbol
V
V
V
I
I
I
P
T
T
T
C
CM
BM
Fig 1.
j
amb
stg
CBO
CEO
EBO
tot
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm
(1) FR4 PCB, mounting pad for collector 1cm
(2) FR4 PCB, standard footprint
Power derating curves
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Rev. 02 — 15 November 2009
(mW)
P
tot
300
200
100
0
0
40
(1)
(2)
Conditions
open emitter
open base
open collector
T
amb
40 V, 500 mA NPN low V
≤ 25 °C
2
80
120
T
amb
006aaa412
(°C)
[1]
[2]
160
Min
-
-
-
-
-
-
-
-
-
−65
−65
PBSS2540E
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
40
40
6
500
1
100
150
250
150
+150
+150
Unit
V
V
V
mA
A
mA
mW
mW
°C
°C
°C
2
.
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