PBSS2540E T/R NXP Semiconductors, PBSS2540E T/R Datasheet - Page 5

• Manufacturer Part Number: PBSS2540E T/R
• Description: Transistors Bipolar - BJT LOW VCESAT (BLISS) TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS2540E T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 450 MHz
• Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-75
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS2540E,115

NXP Semiconductors
7. Characteristics
Table 7.
T
[1]
PBSS2540E_2
Product data sheet
Symbol
I
I
h
V
R
V
V
f
C
CBO
EBO
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25
°
C unless otherwise specified
Characteristics
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02
Conditions
V
V
T
V
V
V
V
I
I
I
I
I
I
V
V
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
C
j
CB
CB
EB
CE
CE
CE
CE
CE
CB
= 150 °C
= 10 mA; I
= 100 mA; I
= 200 mA; I
= 500 mA; I
= 500 mA; I
= 500 mA; I
= 5 V; I
= 30 V; I
= 30 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 5 V; I
= 10 V; I
Rev. 02 — 15 November 2009
C
C
C
C
C
C
E
E
B
E
= 0 A
= 10 mA
= 100 mA
= 500 mA
= 100 mA
= 100 mA;
B
B
B
B
B
= 0 A
= 0 A;
= 0.5 mA
= i
= 5 mA
= 10 mA
= 50 mA
= 50 mA
= 50 mA
e
= 0 A;
40 V, 500 mA NPN low V
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
200
100
50
-
-
-
-
-
-
-
250
-
Typ
-
-
-
-
-
-
-
-
-
-
380
-
-
450
-
PBSS2540E
CEsat
Max
100
50
100
-
-
-
50
100
200
250
500
1.2
1.1
-
6
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Unit
nA
μA
nA
mV
mV
mV
mV
mΩ
V
V
MHz
pF
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