PBSS2540E T/R NXP Semiconductors, PBSS2540E T/R Datasheet - Page 7

• Manufacturer Part Number: PBSS2540E T/R
• Description: Transistors Bipolar - BJT LOW VCESAT (BLISS) TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS2540E T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 450 MHz
• Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-75
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS2540E,115

NXP Semiconductors
PBSS2540E_2
Product data sheet
Fig 7.
Fig 9.
V
BEsat
(V)
(A)
I
(1) T
(2) T
(3) T
C
1.2
1.0
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
0
1
0
10
I
Base-emitter saturation voltage as a function
of collector current; typical values
0
T
Collector current as a function of
collector-emitter voltage; typical values
−1
C
amb
amb
amb
amb
/I
B
= 20
= −55 °C
= 25 °C
= 100 °C
= 25 °C
1
1
2
I
B
(mA) = 25
10
(1)
(2)
(3)
3
22.5
20
17.5
15
12.5
10
7.5
5
2.5
10
2
4
I
006aaa384
C
006aaa386
V
(mA)
CE
(V)
Rev. 02 — 15 November 2009
10
5
3
Fig 8.
Fig 10. Collector-emitter saturation resistance as a
R
R
CEsat
CEsat
(Ω)
(Ω)
10
(1) T
(2) T
(3) T
10
(1) I
(2) I
(3) I
10
10
10
10
40 V, 500 mA NPN low V
10
10
−1
−1
1
1
3
2
10
3
2
10
I
Collector-emitter saturation resistance as a
function of collector current; typical values
T
function of collector current; typical values
−1
C
−1
C
C
C
amb
amb
amb
amb
/I
/I
/I
/I
B
B
B
B
= 20
= 100
= 50
= 10
= 100 °C
= 25 °C
= −55 °C
= 25 °C
1
1
10
10
PBSS2540E
CEsat
10
10
© NXP B.V. 2009. All rights reserved.
(1)
(2)
(3)
2
(1)
(2)
(3)
2
(BISS) transistor
I
I
006aaa385
006aaa387
C
C
(mA)
(mA)
10
10
3
3
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