PBSS2540E T/R NXP Semiconductors, PBSS2540E T/R Datasheet - Page 6

• Manufacturer Part Number: PBSS2540E T/R
• Description: Transistors Bipolar - BJT LOW VCESAT (BLISS) TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS2540E T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 450 MHz
• Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-75
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS2540E,115

NXP Semiconductors
PBSS2540E_2
Product data sheet
Fig 3.
Fig 5.
V
h
CEsat
(V)
(1) T
(2) T
(3) T
10
10
(1) T
(2) T
(3) T
FE
600
500
400
300
200
100
−1
−2
0
1
10
10
V
DC current gain as a function of collector
current; typical values
Collector-emitter saturation voltage as a
function of collector current; typical values
−1
I
-1
C
CE
amb
amb
amb
amb
amb
amb
/I
B
= 2 V
= 100 °C
= 25 °C
= −55 °C
= 100 °C
= 25 °C
= −55 °C
= 20
1
1
(1)
(2)
(3)
10
10
(1)
(2)
(3)
10
10
2
2
I
I
006aaa380
C
006aaa382
C
(mA)
(mA)
Rev. 02 — 15 November 2009
10
10
3
3
Fig 4.
Fig 6.
V
(mV)
V
CEsat
(V)
1100
(1) T
(2) T
(3) T
10
10
(1) I
(2) I
(3) I
BE
900
700
500
300
100
40 V, 500 mA NPN low V
−1
−2
1
10
10
V
Base-emitter voltage as a function of collector
current; typical values
T
Collector-emitter saturation voltage as a
function of collector current; typical values
−1
−1
C
C
C
amb
amb
amb
amb
CE
/I
/I
/I
B
B
B
= 2 V
= 100
= 50
= 10
= −55 °C
= 25 °C
= 100 °C
= 25 °C
1
1
(1)
(2)
(3)
10
10
(1)
(2)
(3)
PBSS2540E
CEsat
10
10
© NXP B.V. 2009. All rights reserved.
2
2
(BISS) transistor
I
I
006aaa381
006aaa383
C
C
(mA)
(mA)
10
10
3
3
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